Alteration in electrical and infrared switching properties of vanadium oxides due to proton irradiation

The effects of proton irradiation on the electrical and infrared switching properties of vanadium oxides were studied. Bombardments are carried out to fluences typical of long-term space missions. Proton bombardment significantly alters semiconductor phase resistivity, infrared transmissivity, transition temperature and hysteresis width. It is concluded that amorphization, hydrogen doping, and strain-related effects are not operative in the changes observed. Vanadium and oxygen vacancies and/or interstitials remain the likely cause for these changes. Implications of these results on proposed damage models are discussed. >