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Alteration in electrical and infrared switching properties of vanadium oxides due to proton irradiation
- Source :
- IEEE Transactions on Nuclear Science. 37:1739-1743
- Publication Year :
- 1990
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1990.
-
Abstract
- The effects of proton irradiation on the electrical and infrared switching properties of vanadium oxides were studied. Bombardments are carried out to fluences typical of long-term space missions. Proton bombardment significantly alters semiconductor phase resistivity, infrared transmissivity, transition temperature and hysteresis width. It is concluded that amorphization, hydrogen doping, and strain-related effects are not operative in the changes observed. Vanadium and oxygen vacancies and/or interstitials remain the likely cause for these changes. Implications of these results on proposed damage models are discussed. >
- Subjects :
- Nuclear and High Energy Physics
Materials science
Hydrogen
Proton
business.industry
Infrared
Transition temperature
Doping
Analytical chemistry
chemistry.chemical_element
Vanadium
Condensed Matter::Materials Science
Nuclear Energy and Engineering
chemistry
Electrical resistivity and conductivity
Optoelectronics
Astrophysics::Earth and Planetary Astrophysics
Irradiation
Electrical and Electronic Engineering
Nuclear Experiment
business
Subjects
Details
- ISSN :
- 15581578 and 00189499
- Volume :
- 37
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Nuclear Science
- Accession number :
- edsair.doi...........1923489bc09b8a8b71b768f7df4cb272