Back to Search
Start Over
Fabrication and high temperature electronic behaviors of n-WO3 nanorods/p-diamond heterojunction
- Source :
- Applied Physics Letters. 110:052106
- Publication Year :
- 2017
- Publisher :
- AIP Publishing, 2017.
-
Abstract
- This work explores the temperature-dependent characteristic and carrier transport behavior of a heterojunction of n-WO3 nanorods (NRs)/p-diamond. The n-type WO3 NRs grown by the hydrothermal method were deposited on a p-type boron-doped diamond film. The p-n heterojunction devices showed good thermal stability and have rectification characteristic from room temperature up to 290 °C. With increasing temperature, the turn-on voltages were decreased, and the rectification ratios were relatively high. The calculated ideality factor of the device decreased monotonously with increased temperature. The carrier transport mechanisms at different applied bias voltages following Ohmic laws, recombination-tunneling, and space-charge-limited current conduction of the heterojunction are discussed depending on temperature.
- Subjects :
- 010302 applied physics
Fabrication
Materials science
Physics and Astronomy (miscellaneous)
business.industry
Diamond
Heterojunction
02 engineering and technology
engineering.material
021001 nanoscience & nanotechnology
01 natural sciences
Hydrothermal circulation
Rectification
0103 physical sciences
engineering
Optoelectronics
Nanorod
Thermal stability
0210 nano-technology
business
Ohmic contact
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 110
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........194cbf421d38902f7cce9bdffc77ee54
- Full Text :
- https://doi.org/10.1063/1.4975208