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Fabrication and high temperature electronic behaviors of n-WO3 nanorods/p-diamond heterojunction

Authors :
Qinglin Wang
Yanpeng Song
Kai Pei
Hongdong Li
Liying Wang
Shaoheng Cheng
Chengze Wu
Dandan Sang
Source :
Applied Physics Letters. 110:052106
Publication Year :
2017
Publisher :
AIP Publishing, 2017.

Abstract

This work explores the temperature-dependent characteristic and carrier transport behavior of a heterojunction of n-WO3 nanorods (NRs)/p-diamond. The n-type WO3 NRs grown by the hydrothermal method were deposited on a p-type boron-doped diamond film. The p-n heterojunction devices showed good thermal stability and have rectification characteristic from room temperature up to 290 °C. With increasing temperature, the turn-on voltages were decreased, and the rectification ratios were relatively high. The calculated ideality factor of the device decreased monotonously with increased temperature. The carrier transport mechanisms at different applied bias voltages following Ohmic laws, recombination-tunneling, and space-charge-limited current conduction of the heterojunction are discussed depending on temperature.

Details

ISSN :
10773118 and 00036951
Volume :
110
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........194cbf421d38902f7cce9bdffc77ee54
Full Text :
https://doi.org/10.1063/1.4975208