Structure and ferroelectric properties of Bi<formula><roman>3.25</roman></formula>La<formula><roman>0.75</roman></formula>Ti<formula><roman>3</roman></formula>O<formula><roman>12</roman></formula> and Bi<formula><roman>3.25</roman></formula>Nd<formula><roman>0.75</roman></formula>Ti<formula><roman>3</roman></formula>O<formula><roman>12</roman></formula> thin films prepared by an MOD method

The structure and ferroelectric properties of Bi3.25 La 0.75Ti3O12 (BLT) and Bi3.25 Nd0.75Ti3O12 (BNT) thin films deposited on (111)Pt/Ti/SiO2/Si substrates using a metalorganic decomposition (MOD) method were investigated. Both the films were polycrystalline structure with the single bismuth-layered phase. The BNT film showed the (117) random orientation, while the BLT film displayed (00l )-preferential orientation. The BNT film showed a larger remnant polarization (~13.8μC/cm2) than the BLT film (~3.5μC/cm2), while both films displayed almost the same value of coercive field. The BNT film had the larger dielectric constant and a litter larger dissipation factor than the BLT film. The superior ferroelectricity of the BNT film was mainly attributed to its (117) random orientation. Furthermore, the BNT film displayed good fatigue endurance up to 109 switching cycles, indicating it was a useful candidate for integrated device applications.&#169; (2004) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.