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Limitations for Reliable Operation at Elevated Temperatures of Al 2 O 3 /AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors Grown by Metal‐Organic Chemical Vapor Deposition on Silicon Substrate
- Source :
- physica status solidi (a). 217:1900697
- Publication Year :
- 2019
- Publisher :
- Wiley, 2019.
- Subjects :
- Materials science
Silicon
business.industry
Transistor
chemistry.chemical_element
Algan gan
Surfaces and Interfaces
Substrate (electronics)
Chemical vapor deposition
Condensed Matter Physics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
law.invention
Metal
Semiconductor
chemistry
law
visual_art
Materials Chemistry
visual_art.visual_art_medium
Optoelectronics
Electrical and Electronic Engineering
business
High electron
Subjects
Details
- ISSN :
- 18626319 and 18626300
- Volume :
- 217
- Database :
- OpenAIRE
- Journal :
- physica status solidi (a)
- Accession number :
- edsair.doi...........1b11ebcc2806bc36e2ab0c7d73a24cec
- Full Text :
- https://doi.org/10.1002/pssa.201900697