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Observation and Modeling of Leakage Current in AlGaN Ultraviolet Light Emitting Diodes
- Source :
- IEEE Photonics Technology Letters. 31:1697-1700
- Publication Year :
- 2019
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2019.
-
Abstract
- Current-voltage ( I-V ) characteristics of AlGaN ultraviolet light-emitting diodes (UV-LEDs) under the temperatures ranging from 50 K to 300 K are analyzed. The abnormal diode characteristics of UV-LEDs below the turn-on voltage indicate the existence of space-charge-limited (SCL) current transport in the presence of deep trap states, which induce a non-linear current leakage effect. The SCL current is gradually overwhelmed by Ohmic leakage as the temperature increases, which is mainly due to the thermally generated carrier concentration and traps deactivation. A modified three-diode circuit model is suggested with an additional series resistor and diode to emulate the forward-bias I-V characteristics of UV-LEDs. An excellent fit to the I-V curves of UV-LEDs is achieved, which illustrates the impact of deep trap states on the electrical characteristics of UV-LEDs.
- Subjects :
- Materials science
business.industry
Ultraviolet light emitting diodes
Wide-bandgap semiconductor
medicine.disease_cause
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
law.invention
law
medicine
Optoelectronics
Electrical and Electronic Engineering
Resistor
business
Ohmic contact
Ultraviolet
Voltage
Diode
Leakage (electronics)
Subjects
Details
- ISSN :
- 19410174 and 10411135
- Volume :
- 31
- Database :
- OpenAIRE
- Journal :
- IEEE Photonics Technology Letters
- Accession number :
- edsair.doi...........1b4419387271f5b953fb9d2fbdca39fd