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Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition
- Source :
- Journal of Applied Physics. 90:5642-5646
- Publication Year :
- 2001
- Publisher :
- AIP Publishing, 2001.
-
Abstract
- Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells were investigated by using photoluminescence, transmission electron microscopy, optical microscopy, and high resolution x-ray diffraction. The InxGa1−xN/GaN (x>0.2) quantum wells used in this study were grown on c-plane sapphire by using metalorganic chemical vapor deposition. The interruption was carried out by closing the group-III metalorganic sources before and after the growths of the InGaN quantum well layers. The transmission electron microscopy images show that with increasing interruption time, the quantum-dot-like regions and well thickness decreased due to indium reevaporation or the thermal etching effect. As a result the photoluminescence peak position was blueshifted and the intensity was reduced. Temperature- and excitation-power-dependent photoluminescence spectra support the results of transmission electron microscopy measurements. The sizes and the number of V defects did not differ with the interruption time. The interruption time is not directly related to the formation of defects. The V defect originates at threading dislocations and inversion domain boundaries due to higher misfit strain.
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 90
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........1d18758a8f2a96a0c4123c535dc538da