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Metal-insulator-semiconductor-type organic light-emitting transistor on plastic substrate

Authors :
Atsushi Yoshizawa
Kazuhiro Kudo
Endo Hiroyuki
Takuya Hata
Obata Katsunari
Kenji Nakamura
Source :
Applied Physics Letters. 89:103525
Publication Year :
2006
Publisher :
AIP Publishing, 2006.

Abstract

The authors report the characteristics of novel metal-insulator-semiconductor-type organic light-emitting transistors (MIS-OLETs). The drain current and luminescent intensity of the MIS-OLET can be controlled by changing hole injection carriers by applying a gate bias voltage. In addition, the high performance (400cd∕m2 at VD=−8V) of MIS-OLETs fabricated on a plastic substrate as well as on a glass substrate is demonstrated and described.

Details

ISSN :
10773118 and 00036951
Volume :
89
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........1d2cd02939fc13a2268ab70a5d24eecc
Full Text :
https://doi.org/10.1063/1.2347152