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Nonvolatile and Neuromorphic Memory Devices Using Interfacial Traps in Two-Dimensional WSe2/MoTe2 Stack Channel
- Source :
- ACS Nano. 14:12064-12071
- Publication Year :
- 2020
- Publisher :
- American Chemical Society (ACS), 2020.
-
Abstract
- Very recently, stacked two-dimensional materials are studied, focusing on the van der Waals interaction at their stack junction interface. Here, we report field effect transistors (FETs) with stack...
- Subjects :
- Materials science
business.industry
Interface (computing)
General Engineering
General Physics and Astronomy
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
0104 chemical sciences
Non-volatile memory
symbols.namesake
Stack (abstract data type)
Neuromorphic engineering
Hardware_INTEGRATEDCIRCUITS
symbols
Optoelectronics
General Materials Science
Field-effect transistor
van der Waals force
0210 nano-technology
business
Hardware_LOGICDESIGN
Communication channel
Subjects
Details
- ISSN :
- 1936086X and 19360851
- Volume :
- 14
- Database :
- OpenAIRE
- Journal :
- ACS Nano
- Accession number :
- edsair.doi...........1d84e6cbf0f94e6f8ca8566296fe5326