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Design for ASIC Reliability for Low-Temperature Applications

Authors :
Yuan Chen
M.M. Mojarradi
Elzbieta Kolawa
Travis Johnson
R.S. Cozy
C. Billman
Gary R. Burke
L. Westergard
Source :
IEEE Transactions on Device and Materials Reliability. 6:146-153
Publication Year :
2006
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2006.

Abstract

A design for reliability methodology has been developed for electronics for low-temperature applications. A hot carrier aging (HCA) lifetime projection model is proposed to take into account the HCA impact on technology, analysis of parametric degradation versus critical circuit path degradation, transistor bias profile, transistor substrate current profile, and operating temperature profile. The most applicable transistor size can be determined in order to meet the reliability requirements of the electronics operating under low temperatures. This methodology and approach can also be applied to other transistor-level failure and/or degradation mechanisms for applications with varying temperature ranges

Details

ISSN :
15304388
Volume :
6
Database :
OpenAIRE
Journal :
IEEE Transactions on Device and Materials Reliability
Accession number :
edsair.doi...........1db7c58fb87b7f31cb6c37d421cfda19