Properties and applications of carbon-doped GaAs and AlxGa1-xAs layers grown by MBE with a pyrolytic graphite filament

Carbon-doped GaAs and Al x Ga 1-x As epilayers have been grown by solid source MBE using resistively heated, pyrolytic graphite filaments for the carbon source. These films were characterized by SIMS, Van der Pauw, X-ray diffraction, photoluminescence. TEM, I-V, and RHEED measurements. The diffusion coefficients and minority carrier lifetimes for C- and Be-doped epilayers are compared. Some potential device applications for C-doped layers are discussed