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Influence of Fin Width on the Total Dose Behavior of p-Channel Bulk MuGFETs

Authors :
Sofie Put
Cor Claeys
Paul Leroux
M. Van Uffelen
Eddy Simoen
Malgorzata Jurczak
Source :
IEEE Electron Device Letters. 31:243-245
Publication Year :
2010
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2010.

Abstract

A first assessment of the total dose behavior of bulk p-multiple-gate field-effect transistors (MuGFETs) is reported, and special attention is given to the effect of the fin width on the radiation behavior. It was found that the effect of radiation-induced traps in the shallow trench isolation is larger when the fin width decreases. This is in contrast to the total dose behavior of SOI MuGFETs.

Subjects

Subjects :
Materials science
Condensed matter physics
business.industry
Transistor
Silicon on insulator
Fin width
Radiation
Radiation effect
Electronic, Optical and Magnetic Materials
law.invention
law
Shallow trench isolation
Total dose
Optoelectronics
Field-effect transistor
Electrical and Electronic Engineering
business

Details

ISSN :
15580563 and 07413106
Volume :
31
Database :
OpenAIRE
Journal :
IEEE Electron Device Letters
Accession number :
edsair.doi...........1e36c5b88df40421d24c613977d7c0b2
Full Text :
https://doi.org/10.1109/led.2009.2039633
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