Advanced TCAD Design Techniques for the Performance Improvement of SiC MOSFETs

This paper introduces novel TCAD post-processing techniques for SiC MOSFETs with the aim of understanding which parts of the device limit the on-state performance. Typically, analytical models of MOSFETs are used as a starting point for the TCAD design process or as a simple way to understand the influence of complex design choices, as discussed in the works of [1-3]. These lumped element models result in a relatively straightforward approach because they explicitly identify the contributions of the regions of the transistor, facilitating the understanding of basic design choices and performance trade-offs. However, the simplifications introduced in analytical models limit their applicability to advanced device structures such as aggressively scaled transistors or trench MOSFETs with cellular layout. This paper presents mathematical techniques based on post-processing of TCAD simulations that combine the accuracy of numerical Finite Element studies with the interpretability of lumped element analytical models.