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High power 625-nm AlGaInP laser diode

High power 625-nm AlGaInP laser diode

Authors :
A. Ohno
Tetsuya Yagi
Shinji Abe
Motoharu Miyashita
Naoyuki Shimada
Source :
22nd IEEE International Semiconductor Laser Conference.
Publication Year :
2010
Publisher :
IEEE, 2010.

Abstract

High power 625-nm AlGaInP laser diode was fabricated and evaluated. Remarkable short wavelength lasing at 624.9 nm was achieved on the condition of T c = 25°C and 50 mW output under CW operation. At injection current of 800 mA, a high output power of 220 mW was obtained. Conversion efficiency from electric power input to luminous flux for 10 lm output was calculated as 11 lm/W. In order to apply a 625-nm LD to practical display, further improvement of its temperature characteristics is necessary.

Details

Database :
OpenAIRE
Journal :
22nd IEEE International Semiconductor Laser Conference
Accession number :
edsair.doi...........1e7e4d90f39f09172b5e19fda48546bb
Full Text :
https://doi.org/10.1109/islc.2010.5642708