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Vertical C-Shaped-Channel Nanosheet FETs Featured With Precise Control of Both Channel-Thickness and Gate-Length

Authors :
Z. R. Xiao
Q. Wang
H. L. Zhu
Z. Chen
Y. K. Zhang
J. J. Li
N. Zhou
J. F. Gao
X. Z. Ai
S. S. Lu
W. X. Huang
W. J. Xiong
Z. Z. Kong
J. J. Xiang
Y. Zhang
J. Zhao
J. B. Liu
Y. H. Lu
G. B. Bai
X. B. He
A. Y. Du
Z. H. Wu
T. Yang
J. F. Li
J. Luo
W. W. Wang
T. C. Ye
Source :
IEEE Electron Device Letters. 43:1183-1186
Publication Year :
2022
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2022.

Details

ISSN :
15580563 and 07413106
Volume :
43
Database :
OpenAIRE
Journal :
IEEE Electron Device Letters
Accession number :
edsair.doi...........1ec49dbae8c7167e2cbe2db70a42acc3
Full Text :
https://doi.org/10.1109/led.2022.3187006