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Vertical C-Shaped-Channel Nanosheet FETs Featured With Precise Control of Both Channel-Thickness and Gate-Length
- Source :
- IEEE Electron Device Letters. 43:1183-1186
- Publication Year :
- 2022
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2022.
- Subjects :
- Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 43
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........1ec49dbae8c7167e2cbe2db70a42acc3
- Full Text :
- https://doi.org/10.1109/led.2022.3187006