Peculiarities of photoluminescence efficiency dependence on excitation intensity in GaN/Al 2 O 3 epilayers

MLA

Viacheslav N. Pavlovskii, et al. “Peculiarities of Photoluminescence Efficiency Dependence on Excitation Intensity in GaN/Al 2 O 3 Epilayers.” Physica Status Solidi C, vol. 10, Feb. 2013, pp. 511–14. EBSCOhost, https://doi.org/10.1002/pssc.201200590.

APA

Viacheslav N. Pavlovskii, I. Reklaitis, Tadas Malinauskas, Evgenii V. Lutsenko, M. V. Rzheutski, Kęstutis Jarašiūnas, Artūras Žukauskas, Vitalii Z. Zubialevich, Alexei S. Shulenkov, Saulius Nargelas, Arūnas Kadys, & G. P. Yablonskii. (2013). Peculiarities of photoluminescence efficiency dependence on excitation intensity in GaN/Al 2 O 3 epilayers. Physica Status Solidi C, 10, 511–514. https://doi.org/10.1002/pssc.201200590

Chicago

Viacheslav N. Pavlovskii, I. Reklaitis, Tadas Malinauskas, Evgenii V. Lutsenko, M. V. Rzheutski, Kęstutis Jarašiūnas, Artūras Žukauskas, et al. 2013. “Peculiarities of Photoluminescence Efficiency Dependence on Excitation Intensity in GaN/Al 2 O 3 Epilayers.” Physica Status Solidi C 10 (February): 511–14. doi:10.1002/pssc.201200590.