TCAD simulations on CMOS propagation induced pulse broadening effect: Dependence analysis on the NMOS VT

Propagation Induced Pulse Broadening (PIPB) effect is becoming a major concern for electronic designers since new technologies are fast enough to propagate and capture Single Event Transients(SET). In this paper we explore the influence of the threshold voltage V T on PIPB effect by simulating the propagation of a SET through a self-feedback chain of CMOS inverters. The conclusions outlined are applicable when designing with Multi-Vt nanometric CMOS technologies.