A novel approach to characterization of progressive breakdown in high-k/metal gate stacks

MLA

Gennadi Bersuker, et al. “A Novel Approach to Characterization of Progressive Breakdown in High-k/Metal Gate Stacks.” Microelectronics Reliability, vol. 48, Nov. 2008, pp. 1759–64. EBSCOhost, https://doi.org/10.1016/j.microrel.2008.07.071.

APA

Gennadi Bersuker, Felix Palumbo, Salvatore Lombardo, Siddarth A. Krishnan, R. Pagano, Paul Kirsch, James H. Stathis, Chadwin D. Young, & Rino Choi. (2008). A novel approach to characterization of progressive breakdown in high-k/metal gate stacks. Microelectronics Reliability, 48, 1759–1764. https://doi.org/10.1016/j.microrel.2008.07.071

Chicago

Gennadi Bersuker, Felix Palumbo, Salvatore Lombardo, Siddarth A. Krishnan, R. Pagano, Paul Kirsch, James H. Stathis, Chadwin D. Young, and Rino Choi. 2008. “A Novel Approach to Characterization of Progressive Breakdown in High-k/Metal Gate Stacks.” Microelectronics Reliability 48 (November): 1759–64. doi:10.1016/j.microrel.2008.07.071.