Erratum: 'Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates'

Authors :: Yu Miyamoto
Taiichi Otsuji
Hyun-Chul Kang
Tetsuya Suemitsu
Roman Olac-vaw
Maki Suemitsu
Hiroyuki Handa
Hiromi Karasawa
Hirokazu Fukidome
Source :: Japanese Journal of Applied Physics. 49:079201
Publication Year :: 2010
Publisher :: IOP Publishing, 2010.

Subjects :: Materials science
Applied physics
Silicon
business.industry
Extraction (chemistry)
General Engineering
General Physics and Astronomy
chemistry.chemical_element
chemistry
Optoelectronics
Field-effect transistor
Epitaxial graphene
Drain current
business
Layer (electronics)
Communication channel

Full Text Access

Tools