Indium doping of CdTe layers and CdTe/Cd1 − xZnxTe microstructures

Doping of CdTe and Cd 1 − x Zn x Te layers and heterostructures with indium donors during their growth by MBE is described. Characterization by SIMS, electrical measurements and photoluminescence is presented with emphasis on: activation efficiency for uniform and planar doping; degree of localization achieved for step-like doping profiles; doped single and multiple quantum wells. Compensation by acceptor impurities and by intrinsic defects occurs at low (≈ 10 16 cm -3 ) and at high ( 18 cm -3 ) In concentrations, respectively. Essentially 100% activation efficiency of the donors is achieved in the intermediate range.