Threshold voltage modulation in monolayer MoS2 field-effect transistors via selective gallium ion beam irradiation

MLA

Mingkun Zhang, et al. “Threshold Voltage Modulation in Monolayer MoS2 Field-Effect Transistors via Selective Gallium Ion Beam Irradiation.” Science China Materials, vol. 65, Oct. 2021, pp. 741–47. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........215fe7b7073ac4ebc227a65217400387&authtype=sso&custid=ns315887.

APA

Mingkun Zhang, Yunshan Zhao, Yida Li, Changjie Zhou, Huili Zhu, Hao Shuai, Baoshan Tang, Hao Gong, Jin Feng Leong, & Weifeng Yang. (2021). Threshold voltage modulation in monolayer MoS2 field-effect transistors via selective gallium ion beam irradiation. Science China Materials, 65, 741–747.

Chicago

Mingkun Zhang, Yunshan Zhao, Yida Li, Changjie Zhou, Huili Zhu, Hao Shuai, Baoshan Tang, Hao Gong, Jin Feng Leong, and Weifeng Yang. 2021. “Threshold Voltage Modulation in Monolayer MoS2 Field-Effect Transistors via Selective Gallium Ion Beam Irradiation.” Science China Materials 65 (October): 741–47. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........215fe7b7073ac4ebc227a65217400387&authtype=sso&custid=ns315887.