Preparation of SnS Thin Films by MOCVD Method Using Single Source Precursor, Bis(3-mercapto-1-propanethiolato) Sn(II)

S gas.The MOCVD process was carried out in the temperature range of 300-400 °C and the average grain size infabricated SnS films was about 500 nm. The optical band gap of the SnS film was about 1.3 eV which is inoptimal range for harvesting solar radiation energy. The precursor and SnS films were characterized throughinfrared spectroscopy, nuclear magnetic resonance spectroscopy, DIP-EI mass spectroscopy, elementalanalyses, thermal analysis, X-ray diffraction, and field emission scanning electron microscopic analyses.Key Words : Sn/S single precursor, SnS thin films, Solar cell, MOCVD methodIntroductionRecently, a lot of researches have focused on thin filmsolar cells as a future resource for sustainable energy. Mostof the advanced thin film photovoltaic technologies arebased on Cu(In,Ga)Se