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Electron Irradiation Effects and Defects Analysis of the Inverted Metamorphic Four-Junction Solar Cells

Authors :
Chunhua Qi
Zhenlong Wu
Chaoming Liu
Juncheng Li
Mingxue Huo
Guoliang Ma
Changxin Tang
Duowei Wang
Yanqing Zhang
Tianqi Wang
Heyi Li
Yidan Wei
Jiaming Zhou
Liyi Xiao
Hsu-Sheng Tsai
Yao Ma
Source :
IEEE Journal of Photovoltaics. 10:1712-1720
Publication Year :
2020
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2020.

Abstract

The degradation of inverted metamorphic four-junction (GaInP/GaAs/In0.3Ga0.7As/In0.58Ga0.42As, IMM4J) solar cells irradiated by 1-MeV electrons was investigated via their spectral responses and the characterization of their electrical properties. As in the case of traditional three-junction (TJ) GaInP/GaAs/Ge solar cells, the electrical properties ( I sc, V oc, and P max) decrease with the logarithmic change of the electron fluence. The degradation of open-circuit voltage ( V oc) is slightly more pronounced than that of I sc in IMM4J solar cells because of the sum rule for V oc and the limit rule for I sc. The spectral response analysis showed that an In0.3Ga0.7As subcell was the most damaged subcell in the irradiated IMM4J solar cell, but an In0.58Ga0.42As subcell had the lowest initial short-circuit current density (Jsc), which was maintained throughout the irradiation test. We therefore focused on the In0.58Ga0.42As subcell. Deep-level transient spectroscopy (DLTS) experiments were realized to study emission and capture processes in two special full configurations of In0.58Ga0.42As and In0.3Ga0.7As subcells of the IMM4J solar cell. DLTS measurements reveal a dominant electron trap at 0.52 eV below the conduction band (Ec) of In0.58Ga0.42As, and the electron trap gradually evolved into Ec-0.46eV and Ec-0.58eV after 1-MeV electron irradiation. Based on the first-principles calculation, Ec-0.46 eV and Ec-0.58 eV can be assigned as ${\bf V}_{{\bf Ga}}^{\bf 0}/{\bf V}_{{\bf Ga}}^{{\rm{ - }}1}$ and ${\bf V}_{{\bf In}}^{\bf 0}/{\bf V}_{{\bf In}}^{{\bf - 1}}$ , respectively. However, only one shallow level Ec-0.03eV was observed within the bandgap of In0.3Ga0.7As after irradiation with DLTS detection. We summarize the issues faced for the space application of IMM4J solar cells by comparing the spectral responses of IMM3J, IMM4J, and TJ solar cells. Finally, the optimization of the design and fabrication of IMM solar cells are proposed.

Details

ISSN :
21563403 and 21563381
Volume :
10
Database :
OpenAIRE
Journal :
IEEE Journal of Photovoltaics
Accession number :
edsair.doi...........2210fb92fdeaca132253a67b9a28fb47
Full Text :
https://doi.org/10.1109/jphotov.2020.3025442