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Pendeo-EpitaxyTM Process for Aluminum Gallium Nitride Thin Films on Silicon Carbide Substrates via Metalorganic Chemical Vapor Deposition
- Source :
- Materials Science Forum. :1491-1494
- Publication Year :
- 2000
- Publisher :
- Trans Tech Publications, Ltd., 2000.
- Subjects :
- Auger electron spectroscopy
Materials science
Mechanical Engineering
chemistry.chemical_element
Chemical vapor deposition
Nitride
Combustion chemical vapor deposition
Condensed Matter Physics
Epitaxy
chemistry.chemical_compound
chemistry
Chemical engineering
Mechanics of Materials
Silicon carbide
General Materials Science
Thin film
Gallium
Subjects
Details
- ISSN :
- 16629752
- Database :
- OpenAIRE
- Journal :
- Materials Science Forum
- Accession number :
- edsair.doi...........227906f4250ca4e787a7ab383c038766