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Concentrations of carbon and oxygen in indium phosphide and gallium arsenide crystals grown by the lec technique

Authors :
G.W. Blackmore
J. S. Hislop
J.B. Mullin
J. B. Clegg
Source :
Journal of Electronic Materials. 5:401-413
Publication Year :
1976
Publisher :
Springer Science and Business Media LLC, 1976.

Abstract

The concentration of carbon and oxygen has been measured in various samples of LEC–grown InP and GaAs crystals using gamma photon activation analysis and mass spectrometry. The concentration of these elements was found to be extremely low (0.1–0.3 ppma) contrary to previouslyreported work.

Details

ISSN :
1543186X and 03615235
Volume :
5
Database :
OpenAIRE
Journal :
Journal of Electronic Materials
Accession number :
edsair.doi...........231393a1921daa4b22cedf9cfaf32091
Full Text :
https://doi.org/10.1007/bf02663367