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Concentrations of carbon and oxygen in indium phosphide and gallium arsenide crystals grown by the lec technique
- Source :
- Journal of Electronic Materials. 5:401-413
- Publication Year :
- 1976
- Publisher :
- Springer Science and Business Media LLC, 1976.
-
Abstract
- The concentration of carbon and oxygen has been measured in various samples of LEC–grown InP and GaAs crystals using gamma photon activation analysis and mass spectrometry. The concentration of these elements was found to be extremely low (0.1–0.3 ppma) contrary to previouslyreported work.
- Subjects :
- Solid-state physics
Chemistry
Inorganic chemistry
chemistry.chemical_element
Gamma photon
Condensed Matter Physics
Mass spectrometry
Oxygen
Electronic, Optical and Magnetic Materials
Gallium arsenide
chemistry.chemical_compound
Materials Chemistry
Indium phosphide
Electrical and Electronic Engineering
Carbon
Subjects
Details
- ISSN :
- 1543186X and 03615235
- Volume :
- 5
- Database :
- OpenAIRE
- Journal :
- Journal of Electronic Materials
- Accession number :
- edsair.doi...........231393a1921daa4b22cedf9cfaf32091
- Full Text :
- https://doi.org/10.1007/bf02663367