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Growth and Characterization of High Quality Si 1- x-y Ge x C y Alloy Grown by Ultra-High Vacuum Chemical Vapor Deposition
- Source :
- Chinese Physics Letters. 16:750-752
- Publication Year :
- 1999
- Publisher :
- IOP Publishing, 1999.
-
Abstract
- High quality Si1-x-yGexCy alloy with 2.2% C is grown at a relatively high temperature (760°C) on Si(100) using ultra-high vacuum/chemical vapor deposition (UHV/CVD) system. The samples are investigated with high resolution cross-sectional transmission electron microscope and x-ray diffraction. Compared with Si1-xGex alloys, Si1-x-yGexCy alloys with small amounts of C have much less strain and larger critical layer thickness. The quality of interface is also improved. Relatively flat growing profiles of the film are confirmed by secondary ion mass spectroscopy. Fourier transform infrared spectroscopy is also used to testify that the carbon atoms are on the substitutional sites. It is proved that the UHV/CVD system is an efficient method of growing Si1-x-yGexCy alloys.
- Subjects :
- Diffraction
Materials science
Ultra-high vacuum
Alloy
Analytical chemistry
General Physics and Astronomy
chemistry.chemical_element
Chemical vapor deposition
engineering.material
Characterization (materials science)
Nuclear magnetic resonance
chemistry
Transmission electron microscopy
engineering
Fourier transform infrared spectroscopy
Carbon
Subjects
Details
- ISSN :
- 17413540 and 0256307X
- Volume :
- 16
- Database :
- OpenAIRE
- Journal :
- Chinese Physics Letters
- Accession number :
- edsair.doi...........231cf75fb07a5ba9fa6d9d2475b9893e