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Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss
- Source :
- Chinese Optics Letters. 14:052301
- Publication Year :
- 2016
- Publisher :
- Shanghai Institute of Optics and Fine Mechanics, 2016.
-
Abstract
- In this work, we report a broadband terahertz wave modulator based on a top-gate graphene field effect transistor with polyimide as the gate dielectric on a PET substrate. The transmission of the terahertz wave is modulated by controlling the Fermi level of graphene via the polyimide as the top-gate dielectric material instead of the traditional dielectric materials. It is found that the terahertz modulator can achieve a modulation depth of ∼20.9% with a small operating gate voltage of 3.5 V and a low insertion loss of 2.1 dB.
- Subjects :
- 0301 basic medicine
030103 biophysics
Materials science
business.industry
Terahertz radiation
Graphene
Fermi level
Gate dielectric
Dielectric
01 natural sciences
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
law.invention
010309 optics
Amplitude modulation
03 medical and health sciences
symbols.namesake
Optics
law
0103 physical sciences
symbols
Insertion loss
Electrical and Electronic Engineering
business
Polyimide
Subjects
Details
- ISSN :
- 16717694
- Volume :
- 14
- Database :
- OpenAIRE
- Journal :
- Chinese Optics Letters
- Accession number :
- edsair.doi...........232f07d26b81213727461fb5631c8938