AlGaInP green light-emitting diode

The structures and performances of surface emitting AlGaInP green light emitting diodes (LEDs) with emission wavelength around 565 nm were studied. The AlGaInP green LEDs with epitaxial structure grown on P-type GaAs substrate showed the best performance. This is the first paper ever reported for the fabrication of AlGaInP LEDs using P-type GaAs as a substrate. In AlGaInP LED structure using P-type GaAs substrate, the highly conductive n- type AlInP was consequently used as a top confining layer and the current crowding problem was significantly improved. Therefore, the green electroluminescence (EL) was uniformly emitted from the surface of LED dice.