Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 μm laser diode

MLA

W. J. Choi, et al. “Effect of Symmetric and Asymmetric In0.2Ga0.8As Wells on the Structural and Optical Properties of InAs Quantum Dots Grown by Migration Enhanced Molecular Beam Epitaxy for the Application to a 1.3 Μm Laser Diode.” Journal of Applied Physics, vol. 102, July 2007, p. 023105. EBSCOhost, https://doi.org/10.1063/1.2748870.

APA

W. J. Choi, J. D. Song, Ho-Sang Kwack, S. P. Ryu, Y. T. Lee, J. I. Lee, Y. H. Cho, & N. K. Cho. (2007). Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 μm laser diode. Journal of Applied Physics, 102, 023105. https://doi.org/10.1063/1.2748870

Chicago

W. J. Choi, J. D. Song, Ho-Sang Kwack, S. P. Ryu, Y. T. Lee, J. I. Lee, Y. H. Cho, and N. K. Cho. 2007. “Effect of Symmetric and Asymmetric In0.2Ga0.8As Wells on the Structural and Optical Properties of InAs Quantum Dots Grown by Migration Enhanced Molecular Beam Epitaxy for the Application to a 1.3 Μm Laser Diode.” Journal of Applied Physics 102 (July): 023105. doi:10.1063/1.2748870.