Quantum Effects on Transport Characteristics in Ultra-Small MOSFETs

Drain-current-gate-voltage characteristics of 13 nm- and 9 nm-gate-length MOSFETs are simulated using a nonequilibrium Green's function (NEGF) technique. The calculated characteristics are compared with those calculated with semi-classical Monte Carlo simulations of two-dimensional (2D-MC) and three-dimensional electron gases (3D-MC). Adopting the same scattering model for NEGF, 2D-MC, and 3D-MC simulations, impact of quantum effects along the confinement direction and along the transport direction is discussed.