A study of the oxygen precipitation kinetics in zirconium-doped silicon

MLA

V. K. Prokof’eva, et al. “A Study of the Oxygen Precipitation Kinetics in Zirconium-Doped Silicon.” Technical Physics Letters, vol. 28, Nov. 2002, pp. 962–63. EBSCOhost, https://doi.org/10.1134/1.1526897.

APA

V. K. Prokof’eva, B. N. Rygalin, A. G. Grishin, V. V. Svetukhin, & T. S. Il’ina. (2002). A study of the oxygen precipitation kinetics in zirconium-doped silicon. Technical Physics Letters, 28, 962–963. https://doi.org/10.1134/1.1526897

Chicago

V. K. Prokof’eva, B. N. Rygalin, A. G. Grishin, V. V. Svetukhin, and T. S. Il’ina. 2002. “A Study of the Oxygen Precipitation Kinetics in Zirconium-Doped Silicon.” Technical Physics Letters 28 (November): 962–63. doi:10.1134/1.1526897.