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Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices
- Source :
- ACS Applied Materials & Interfaces. 10:29766-29778
- Publication Year :
- 2018
- Publisher :
- American Chemical Society (ACS), 2018.
-
Abstract
- Redox-type resistive random access memories based on transition-metal oxides are studied as adjustable two-terminal devices for integrated network applications beyond von Neumann computing. The pre...
- Subjects :
- 010302 applied physics
Resistive touchscreen
Materials science
Polarity (physics)
business.industry
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Resistive random-access memory
symbols.namesake
Resistive switching
0103 physical sciences
symbols
Optoelectronics
General Materials Science
0210 nano-technology
business
Random access
Quantum tunnelling
Von Neumann architecture
Subjects
Details
- ISSN :
- 19448252 and 19448244
- Volume :
- 10
- Database :
- OpenAIRE
- Journal :
- ACS Applied Materials & Interfaces
- Accession number :
- edsair.doi...........260c765b071e93d8bc8ccc7b821ec48b