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InAsSbP double-heterostructure lasers for the spectral range 2.7–3.0 µm (T=77 K)
- Source :
- Semiconductors. 32:218-221
- Publication Year :
- 1998
- Publisher :
- Pleiades Publishing Ltd, 1998.
-
Abstract
- We have produced, by using liquid-phase epitaxy, 2.7 to 3.0-µm lasers based on InAsSbP double-heterostructures with different phosphorus contents in the active and wide-gap regions. The lasers possess threshold current density ∼0.8 kA/cm2 at 77 K and operate in the pulsed mode up to ∼124 K with maximum threshold current density 10–12 kA/cm2. The lasers have a low series resistance ∼0.45 Ω.
- Subjects :
- Range (particle radiation)
Materials science
Threshold current
Equivalent series resistance
business.industry
Analytical chemistry
Double heterostructure
Condensed Matter Physics
Epitaxy
Laser
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
law.invention
law
Magnet
Optoelectronics
Pulsed mode
business
Subjects
Details
- ISSN :
- 10906479 and 10637826
- Volume :
- 32
- Database :
- OpenAIRE
- Journal :
- Semiconductors
- Accession number :
- edsair.doi...........26591ea24fc81e166bfe6328774629df