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The effect of substrate temperature on P-CVD deposited a-SiGe:H films
- Source :
- Solar Energy Materials and Solar Cells. 57:209-216
- Publication Year :
- 1999
- Publisher :
- Elsevier BV, 1999.
-
Abstract
- Undoped a-SiGe : H films were deposited by the RF plasma chemical vapor deposition method. Films deposited at different substrate temperatures ranging between 100°C and 300°C were studied for their optoelectronic and structural properties. Structural defects like vacancies and microvoids were studied by positron lifetime spectroscopy (PLTS) at room temperature. Optoelectronic properties of the films were correlated with the PLTS measurements. The observations show a decrease in the deposition rate with substrate temperature. Good optoelectronic properties and proper structural relaxation have been obtained with a decrease in microvoid concentration.
- Subjects :
- Deposition rate
Materials science
Renewable Energy, Sustainability and the Environment
Positron Lifetime Spectroscopy
Relaxation (NMR)
Analytical chemistry
Mineralogy
Substrate (electronics)
Chemical vapor deposition
Plasma
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Subjects
Details
- ISSN :
- 09270248
- Volume :
- 57
- Database :
- OpenAIRE
- Journal :
- Solar Energy Materials and Solar Cells
- Accession number :
- edsair.doi...........2680b0e9bc8c77a80184084b4454ac72