Direct femtosecond laser ablation of large-area TaSe2, SnS2, and TiS2 thick films by a back ablation procedure

Direct ablation of large-area graphene-like two-dimensional (2D) materials, i.e., tantalum diselenide ( T a S e 2 ), stannic disulfide ( S n S 2 ), and titanium disulfide ( T i S 2 ), by the back ablation method with a femtosecond laser with a repetition rate of 50 MHz and pulse width of 200 fs is studied for the first time to our knowledge. The ablation thresholds of the three kinds of materials are discussed. In addition, the optimization and ablation of narrow grooves on the films are demonstrated. Our work demonstrates the direct femtosecond laser ablation processing of the graphene-like 2D-material films and the potential of 2D-material-film-based devices.