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Nucleation control of CVD growth silicon nanocrystals for quantum devices
- Source :
- Microelectronic Engineering. :511-515
- Publication Year :
- 2002
- Publisher :
- Elsevier BV, 2002.
-
Abstract
- We present a study of nucleation and organization of Si quantum dots (Si QDs) grown on insulating layers. The samples were investigated by scanning electron microscopy, high-resolution transmission electron microscopy, and scanning tunneling microscope (STM). We demonstrate that the chemical nature of the surface influences the Si QDs nucleation. We have organized the Si QDs using a buried array of dislocations obtained by molecular bonding of Si wafers. The electrical properties of individual Si QDs were investigated and memory effects were shown in C-MOS transistors integrating Si QDs within the gate oxide.
- Subjects :
- Chemistry
Scanning electron microscope
Nucleation
Nanotechnology
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
law.invention
Nanocrystal
Transmission electron microscopy
Gate oxide
Quantum dot
law
Scanning transmission electron microscopy
Electrical and Electronic Engineering
Scanning tunneling microscope
Subjects
Details
- ISSN :
- 01679317
- Database :
- OpenAIRE
- Journal :
- Microelectronic Engineering
- Accession number :
- edsair.doi...........26a77f1e051141ed22a4c816d0f7dfc3