Cu nanoparticle-processed n-type Bi2Te2.7Se0.3 alloys for low-temperature thermoelectric power generation

Bi-Te-based materials have been used for room-temperature thermoelectric applications. However, n-type Bi2(Te,Se)3 thermoelectric alloys show a limited conversion efficiency, as compared to their p-type counterparts, thus hindering further widespread room-temperature applications. In this study, we investigated the enhanced thermoelectric properties of n-type Bi2(Te,Se)3 materials by the addition of Cu nanoparticles via a conventional high-energy ball milling process. The electrical and thermal transport properties were modulated by changing the amount of Cu nanoparticles. The power factor was enhanced by controlling the carrier, and the total thermal conductivity was reduced mainly due to the reduction in electronic thermal conductivity. Thus, dimensionless thermoelectric figure of merit (zT) at room temperature was enhanced for the Cu-added samples, and the highest zT value of 0.85 at 375 K was achieved in 2% Cu-doped Bi2Te2.7Se0.3. The average zT (zTavg) value between room temperature and 500 K was 0.79 for the 2% Cu-doped Bi2Te2.7Se0.3, which was 20% higher than that of the pristine Bi2Te2.7Se0.3, whereas a zT higher than 0.80 was sustained from room temperature to ~450 K. These results can lead to a high thermoelectric power generation efficiency of 7.6% at ΔT = 200 K.