Spatial distributions of impurities and defects in Te- and Si-doped GaAs grown in a reduced gravity environment

MLA

L.Y. Lin, et al. “Spatial Distributions of Impurities and Defects in Te- and Si-Doped GaAs Grown in a Reduced Gravity Environment.” Journal of Crystal Growth, vol. 103, June 1990, pp. 38–45. EBSCOhost, https://doi.org/10.1016/0022-0248(90)90167-j.

APA

L.Y. Lin, C.J. Li, Z.G. Wang, & S.K. Wan. (1990). Spatial distributions of impurities and defects in Te- and Si-doped GaAs grown in a reduced gravity environment. Journal of Crystal Growth, 103, 38–45. https://doi.org/10.1016/0022-0248(90)90167-j

Chicago

L.Y. Lin, C.J. Li, Z.G. Wang, and S.K. Wan. 1990. “Spatial Distributions of Impurities and Defects in Te- and Si-Doped GaAs Grown in a Reduced Gravity Environment.” Journal of Crystal Growth 103 (June): 38–45. doi:10.1016/0022-0248(90)90167-j.