SPECTROSCOPIC AND STRUCTURAL PROPERTIES OF NITROGEN DOPED LOW-TEMPERATURE SiO2 FILMS

The stoichiometry, contamination, chemical bonding, and electrical properties of nitrogen doped, low-temperature SiO 2 films prepared by the pyrolytic decomposition of silane in an ammonia rich atmosphere on InSb and Si substrates have been studied by attenuated total reflection (ATR), Auger, electrical, ellipsometry, nuclear reaction analysis, optical transmission, Rutherford backscattering (RBS), and secondary ion mass spectroscopy (SIMS) techniques. The films were quite similar to thermal SiO 2 films in their physical properties as demonstrated by each of the above techniques and had uniform Si and 0 concentrations. The N concentration in the films was between 1 to 3% of the 0 concentration atomically, depending on growth parameters. The optical results demonstrated conclusive evidence of Si-H bonding but inconclusive evidence of Si-N bonding in the films.