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Effects of Ta2O5 addition on relaxation behavior and electric properties of PMS–PNN–PZT ceramics
- Source :
- Journal of Materials Science: Materials in Electronics. 29:16864-16871
- Publication Year :
- 2018
- Publisher :
- Springer Science and Business Media LLC, 2018.
-
Abstract
- Pb(Mn1/3Sb2/3)0.01(Ni1/3Nb2/3)0.495(Zr0.3Ti0.7)0.495O3+x wt% Ta2O5 (PMS–PNN–PZT, x = 0, 0.2, 0.4, 0.6, 0.8) lead piezoelectric ceramics were prepared by a traditional two-step solid-state reaction method. The effect of Ta2O5 content on the phase structure, microstructure, electrical properties and dielectric relaxation of PMS–PNN–PZT ceramics was investigated. The XRD patterns show that all ceramics have pure perovskite structure. Ta2O5 doping can promote the grain growth and improve electrical properties. And the ceramics have high relaxation behavior. When x = 0.4, it exhibits optimum electrical performance: d33 = 805 pC/N, kp = 66%, er = 6838, tanδ = 1.4%, Tc = 118.5 °C, γ = 1.9618, Ec = 3.652 kV/cm, Pr = 21.91 µC/cm2. This indicates that Ta2O5 can be used as an effective dopant in PMS–PNN–PZT ceramics and the ceramics can be used as the main material for multilayer ceramic capacitors and electro-strictive actuators.
- Subjects :
- 010302 applied physics
Materials science
Dopant
Doping
02 engineering and technology
Dielectric
021001 nanoscience & nanotechnology
Condensed Matter Physics
Microstructure
01 natural sciences
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Grain growth
visual_art
0103 physical sciences
visual_art.visual_art_medium
Relaxation (physics)
Ceramic
Electrical and Electronic Engineering
Composite material
0210 nano-technology
Ceramic capacitor
Subjects
Details
- ISSN :
- 1573482X and 09574522
- Volume :
- 29
- Database :
- OpenAIRE
- Journal :
- Journal of Materials Science: Materials in Electronics
- Accession number :
- edsair.doi...........273bca34e19f0ee9fa9951c5292edb5e
- Full Text :
- https://doi.org/10.1007/s10854-018-9781-x