Back to Search
Start Over
Plasma deposited SiO2 for planar self-aligned gate metal–insulator–semiconductor field effect transistors on semi-insulating InP
- Source :
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:130
- Publication Year :
- 1994
- Publisher :
- American Vacuum Society, 1994.
-
Abstract
- Metal-insulator-semiconductor (MIS) field effect transistors were fabricated on InP substrates using a planar self-aligned gate process. A 700-1000 A gate insulator of Si02 doped with phosphorus was deposited by a direct plasma enhanced chemical vapor deposition at 400 mTorr, 275 C, 5 W, and power density of 8.5 MW/sq cm. High frequency capacitance-voltage measurements were taken on MIS capacitors which have been subjected to a 700 C anneal and an interface state density of lxl0(exp 11)/eV/cq cm was found. Current-voltage measurements of the capacitors show a breakdown voltage of 107 V/cm and a insulator resistivity of 10(exp 14) omega cm. Transistors were fabricated on semi-insulating InP using a standard planar self-aligned gate process in which the gate insulator was subjected to an ion implantation activation anneal of 700 C. MIS field effect transistors gave a maximum extrinsic transconductance of 23 mS/mm for a gate length of 3 microns. The drain current drift saturated at 87.5% of the initial current, while reaching to within 1% of the saturated value after only 1x10(exp 3). This is the first reported viable planar InP self-aligned gate transistor process reported to date.
Details
- ISSN :
- 0734211X
- Volume :
- 12
- Database :
- OpenAIRE
- Journal :
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Accession number :
- edsair.doi...........28421a316660c7b5437827255f371277