The importance of nucleation layer for the GaN N-face purity on the annealed Al2O3 layers deposited by atomic layer deposition

MLA

Marek Kolenda, et al. “The Importance of Nucleation Layer for the GaN N-Face Purity on the Annealed Al2O3 Layers Deposited by Atomic Layer Deposition.” Materials Science and Engineering: B, vol. 284, Oct. 2022, p. 115850. EBSCOhost, https://doi.org/10.1016/j.mseb.2022.115850.

APA

Marek Kolenda, Arūnas Kadys, Tadas Malinauskas, Edvinas Radiunas, Riina Ritasalo, & Roland Tomašiūnas. (2022). The importance of nucleation layer for the GaN N-face purity on the annealed Al2O3 layers deposited by atomic layer deposition. Materials Science and Engineering: B, 284, 115850. https://doi.org/10.1016/j.mseb.2022.115850

Chicago

Marek Kolenda, Arūnas Kadys, Tadas Malinauskas, Edvinas Radiunas, Riina Ritasalo, and Roland Tomašiūnas. 2022. “The Importance of Nucleation Layer for the GaN N-Face Purity on the Annealed Al2O3 Layers Deposited by Atomic Layer Deposition.” Materials Science and Engineering: B 284 (October): 115850. doi:10.1016/j.mseb.2022.115850.