High Pressure Transport Experiments in 3 Dimensional Systems

For more than twenty years hydrostatic pressure has been used as a variable in experimental measurements in semiconductors. The investigation of its effect on the properties of 3D systems is clearly important for a basic understanding of band structure, conduction processes, etc. As early as 1968, W. PAUL (1) gave an extensive plenary paper on this subject, and since then many authors have reviewed further developments R.A. STRADLING (2) published one of the latest papers on the subject in the Advances in Solid State Physics (1985).