Dual Layer Pt Metal Nanocrystal Flash for Multi-Level-Cell NAND Application

Most of the current high-density Flash cells use multi-level-cell (MLC) technology to store 2-bits/cell to increase memory density. In this work, dual layer metal nanocrystal (NC) flash EEPROM device, with large memory window, good retention and 10 4 cycle endurance is reported. High-temperature retention, gate bias accelerated retention, read disturb and post- cycling retention measurements show excellent reliability of the NC devices which make them suitable for the MLC application.