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Circuits and AMOLED display with self-aligned a-IGZO TFTs on polyimide foil
- Source :
- Journal of the Society for Information Display. 22:509-517
- Publication Year :
- 2014
- Publisher :
- Wiley, 2014.
-
Abstract
- A process to make self-aligned top-gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) on polyimide foil is presented. The source/drain (S/D) region's parasitic resistance reduced during the SiN interlayer deposition step. The sheet resistivity of S/D region after exposure to SiN interlayer deposition decreased to 1.5 kΩ/□. TFTs show field-effect mobility of 12.0 cm2/(V.s), sub-threshold slope of 0.5 V/decade, and current ratio (I ON/OFF) of >107. The threshold voltage shifts of the TFTs were 0.5 V in positive (+1.0 MV/cm) bias direction and 1.5 V in negative (-1.0 MV/cm) bias direction after extended stressing time of 104 s. We achieve a stage-delay of ~19.6 ns at V-DD = 20 V measured in a 41-stage ring oscillator. A top-emitting quarter-quarter-video-graphics-array active-matrix organic light-emitting diode display with 85 ppi (pixels per inch) resolution has been realized using only five lithographic mask steps. For operation at 6 V supply voltage (V-DD), the brightness of the display exceeds 150 cd/m2. A process to make self-aligned top-gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) is presented. TFTs show field-effect mobility of 12.0 cm2/(V.s), sub-threshold slope of 0.5 V/decade, and current ratio (I ON/OFF) of over 107. In applications, a 41-stage ring oscillator with a stage-delay of ~19.6 ns (at V-DD = 20 V) and a top-emitting quarter-quarter-video-graphics-array (QQVGA) active-matrix organic light-emitting diode (AMOLED) display with 85 ppi (pixels per inch) resolution using five lithographic mask steps have been realized on a polyimide foil. Copyright 2015 Society for Information Display.
- Subjects :
- Materials science
business.industry
Transistor
Nanotechnology
Ring oscillator
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Threshold voltage
law.invention
AMOLED
law
Thin-film transistor
Parasitic element
Optoelectronics
Electrical and Electronic Engineering
business
Sheet resistance
Diode
Subjects
Details
- ISSN :
- 10710922
- Volume :
- 22
- Database :
- OpenAIRE
- Journal :
- Journal of the Society for Information Display
- Accession number :
- edsair.doi...........29b6339862cad07c085538c4193c313f