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Electroluminescence from a Schottky-type p-GaN gate structure
- Source :
- Journal of Shenzhen University Science and Engineering. 38:227-231
- Publication Year :
- 2021
- Publisher :
- China Science Publishing & Media Ltd., 2021.
Details
- ISSN :
- 10002618
- Volume :
- 38
- Database :
- OpenAIRE
- Journal :
- Journal of Shenzhen University Science and Engineering
- Accession number :
- edsair.doi...........29da3f4d3f2e042c036faba7fadc4fcd