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Atomic layer epitaxy for quantum well nitride-based devices
- Source :
- SPIE Proceedings.
- Publication Year :
- 2016
- Publisher :
- SPIE, 2016.
-
Abstract
- The development and characterization of nitride QW structures grown by atomic layer epitaxy (ALEp) for device applications are discussed. We have grown epitaxial thin films (4-10nm) covering the full range of binary and ternary III-N compositions by ALEp. In this work, ALEp-grown QW structures are presented. Optical characteristics are discussed. Characterization of layer interfaces and composition are critical to the development of this growth technique for quantum-based devices. Structures to study this by atom probe tomography have been created. By understanding the structure of crystalline ALEp films with nanometer-scale thickness, the unique properties of these materials can be advanced for quantum-scale applications.
- Subjects :
- 010302 applied physics
Materials science
business.industry
Nanotechnology
02 engineering and technology
Atom probe
Nitride
021001 nanoscience & nanotechnology
01 natural sciences
law.invention
Characterization (materials science)
law
0103 physical sciences
Atomic layer epitaxy
Optoelectronics
0210 nano-technology
business
Ternary operation
Layer (electronics)
Quantum
Quantum well
Subjects
Details
- ISSN :
- 0277786X
- Database :
- OpenAIRE
- Journal :
- SPIE Proceedings
- Accession number :
- edsair.doi...........2a41ff8ed58e457d6a078c021a7e1486