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Characterization of deep levels in InGaP grown by compound-source molecular beam epitaxy

Authors :
J.-I. Song
Jae Wan Kim
Jung-Sung Kim
S. J. Jo
Source :
Journal of Applied Physics. 89:4407-4409
Publication Year :
2001
Publisher :
AIP Publishing, 2001.

Abstract

Deep levels in Si-doped In0.49Ga0.51P grown by compound-source molecular beam epitaxy (MBE) have been investigated by deep level transient spectroscopy. In0.49Ga0.51P samples were grown by compound-source MBE with V/III ratios of 4, 10, and 17. Depending upon the V/III ratio three major deep levels with activation energies of 0.26±0.02, 0.36±0.02, and 0.82±0.05 eV were observed. The effect of thermal annealing on the behavior of deep levels was also investigated. The deep levels in InGaP grown by compound-source MBE showed behavior of phosphorus antisites and related complexes unlike those found in solid-source MBE-grown InGaP that showed behavior of phosphorus vacancies and related complexes. Si-doped InGaP layers grown with a V/III ratio of 4 showed trap concentration and capture cross section as low as 1.38×1014 cm−3 and 2.9×10−16 cm2, respectively. The results indicate the potential of InGaP grown by compound-source MBE for use in improved low-frequency noise applications.

Details

ISSN :
10897550 and 00218979
Volume :
89
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi...........2aad687a6faf5423e75bf0a050f63a85
Full Text :
https://doi.org/10.1063/1.1353559