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Spectral Response Model for Front-Side-Illuminated Detectors
- Source :
- Journal of Electronic Materials. 38:1624-1627
- Publication Year :
- 2009
- Publisher :
- Springer Science and Business Media LLC, 2009.
-
Abstract
- Spectral response of detectors can be modeled using a stack matrix approach. The different material layers that make up the detector form the optical stack. Light intensity is proportional to the square of the amplitude of the electromagnetic field’s electric field component. Using the electric component of light, the model takes into account the reflective and transmission coefficients at the interface between two adjacent layers and the phase difference during propagation within each layer. The transition from one optical layer to another and the propagation within an optical layer can be formulated as 2 × 2 matrices; their multiplication through every optical layer makes up the stack matrix that defines the optical properties of the detector. Knowing the complex index of refraction for each layer in the detector, the intensity of light can be calculated at any point in the detector structure, which can then be used to determine the response of the detector as a function of wavelength. This model shows fairly good agreement with the experimental data, even revealing fine structure and etalon effects. Using this model, the detector can be designed to meet specific spectral characteristics. The spectral response model was used on high-density vertically interconnected photodiode front-side-illuminated photodiodes.
- Subjects :
- Physics::Instrumentation and Detectors
Chemistry
business.industry
Detector
Photodetector
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Photodiode
law.invention
Light intensity
Optics
Stack (abstract data type)
law
Materials Chemistry
Phase detector characteristic
Electrical and Electronic Engineering
business
Refractive index
Fabry–Pérot interferometer
Subjects
Details
- ISSN :
- 1543186X and 03615235
- Volume :
- 38
- Database :
- OpenAIRE
- Journal :
- Journal of Electronic Materials
- Accession number :
- edsair.doi...........2ac49037f2d80105e829a5cb919fe442
- Full Text :
- https://doi.org/10.1007/s11664-009-0782-7