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Floor free 10-Gb/s transmission with directly modulated GaInNAs-GaAs 1.35-/spl mu/m laser for metropolitan applications
- Source :
- IEEE Photonics Technology Letters. 17:971-973
- Publication Year :
- 2005
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2005.
-
Abstract
- Among the new semiconductor materials for telecom devices, the GaInNAs-GaAs structure presents interesting properties for low-cost applications, like high differential gain and high T/sub 0/. Another key aspect of the performance is the behavior of the GaInNAs-GaAs based lasers under high bit rate direct modulation. Here, we demonstrate the dynamic capabilities of GaInNAs-GaAs three-quantum-well ridge structure through 2.5-Gb/s directly modulated laser emission and transmission on standard fiber, in the temperature range 25/spl deg/C-85/spl deg/C. Besides transmission is demonstrated up to 10 Gb/s at 25/spl deg/C on the same fiber, without penalty and bit-error-rate floor.
- Subjects :
- Materials science
Differential gain
business.industry
Atmospheric temperature range
Laser
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Gallium arsenide
law.invention
chemistry.chemical_compound
chemistry
Transmission (telecommunications)
Modulation
law
Optoelectronics
Fiber
Electrical and Electronic Engineering
business
Directly modulated laser
Subjects
Details
- ISSN :
- 10411135
- Volume :
- 17
- Database :
- OpenAIRE
- Journal :
- IEEE Photonics Technology Letters
- Accession number :
- edsair.doi...........2b685aa51775186b251a552442bfcf62