Enhancing linearity in I–V characteristics by B/N doping in graphene for communication devices

MLA

Preetika Sharma, et al. “Enhancing Linearity in I–V Characteristics by B/N Doping in Graphene for Communication Devices.” Journal of Materials Science: Materials in Electronics, vol. 28, Feb. 2017, pp. 7668–76. EBSCOhost, https://doi.org/10.1007/s10854-017-6460-2.

APA

Preetika Sharma, Sukhbir Singh, Shuchi Gupta, & Inderpreet Kaur. (2017). Enhancing linearity in I–V characteristics by B/N doping in graphene for communication devices. Journal of Materials Science: Materials in Electronics, 28, 7668–7676. https://doi.org/10.1007/s10854-017-6460-2

Chicago

Preetika Sharma, Sukhbir Singh, Shuchi Gupta, and Inderpreet Kaur. 2017. “Enhancing Linearity in I–V Characteristics by B/N Doping in Graphene for Communication Devices.” Journal of Materials Science: Materials in Electronics 28 (February): 7668–76. doi:10.1007/s10854-017-6460-2.